SD2921-10 rf power transistors hf/vhf/uhf n-channel mosfets n gold metallization n excellent thermal stability n common source configuration n pout = 150w min. with 12.5 db gain @175 mhz n thermally enhanced packaging for lower junction temperatures description the SD2921-10 is a gold metallized n-channel mos field-effect rf power transistor. being electrically identical to the standard sd2921 mosfet, it is intended for use in 50v dc large signal applications up to 200 mhz. the SD2921-10 is mechanical compatible to the sd2921 but it offers in addition a better thermal capability (25% lower thermal resistance), representing the best-in-class transistor for ism applications. pin connection november 1999 absolute maximum ratings (t case = 25 o c) symbol parameter value unit v (br)dss drain source voltage 125 v v dgr drain-gate voltage (r gs = 1m w ) 125 v v gs gate-source voltage 20 v i d drain current 20 a p diss power dissipation 389 w t j max. operating junction temperature 200 o c t stg storage temperature -65 to 150 o c thermal data r th(j-c) r th(c-s) junction-case thermal resistance case-heatsink thermal resistance * 0.45 0.2 o c/w o c/w * determined using a flat aluminum or cop per heat sink with thermal compound applied (dow corning 340 or equivalent). m174 epoxy sealed ? order code branding SD2921-10 SD2921-10 1. drain 3.gate 2. source 4. source 1/10
electrical specification (t case = 25 o c) static symbol parameter min. typ. max. unit v (br)dss v gs = 0v i ds = 100 ma 125 v i dss v gs = 0v v ds = 50 v 5 ma i gss v gs = 20v v ds = 0 v 5 m a v gs(q) v ds = 10v i d = 250 ma 2.0 5.0 v v ds(on) v gs = 10v i d = 10 a 3.0 v g fs v ds = 10v i d = 5 a 4 mho c iss v gs = 0v v ds = 50 v f = 1 mhz 411 pf c oss v gs = 0v v ds = 50 v f = 1 mhz 198 pf c rss v gs = 0v v ds = 50 v f = 1 mhz 27 pf dynamic symbol parameter min. typ. max. unit p out f = 175 mhz v dd = 50 v i dq = 250 ma 150 w g ps f = 175 mhz v dd = 50 v p out = 150 w i dq = 250 ma 12.5 14 db h d f = 175 mhz v dd = 50 v p out = 150 w i dq = 250 ma 50 55 % load mismatch f = 175 mhz v dd = 50 v p out = 150 w i dq = 250 ma all phase angles 10:1 vswr impedance data freq. z in ( w )z dl ( w ) 30 mhz 1.7 - j 5.7 6.8 + j 0.9 175 mhz 1.2 - j 2.0 2.0 + j 2.4 ref. 1021305m SD2921-10 2/10
output power vs input power 1 4 7 10131619 pin, input power (w) 0 50 100 150 200 250 pout, output power (w) vdd = 50v vdd = 40v tc = 25c f = 175 mhz idq = 250ma output power vs supply voltage capacitance vs drain-source voltage 10 100 1000 10000 vds, drain-source voltage (volts) c, capacitance (pf) 0 1020304050 ciss coss crss output power vs input power 135791113151719 pin, input power (w) 0 50 100 150 200 250 300 pout, output power (w) tcase = -20c idq = 250 ma vdd = 50v f = 175mhz tcase = 25c tcase = 80c output power vs gate voltage -3 -2 -1 0 1 2 3 vgs, gate-source voltage (volts) 0 50 100 150 200 pout, output power (w) vdd = 50v idq = 250ma f = 175mhz pin = constant t = -20c t = 25c t = 80 c drain current vs gate voltage 2 2.5 3 3.5 4 4.5 5 5.5 6 vgs, gate-source voltage (volts) 0 5 10 15 id, drain current (a) vds = 10v t = -20c t = 25c t = 80c 24 28 32 36 40 44 48 vdd, supply voltage (volts) 0 50 100 150 200 pout, output power (watts) pin = 9w idq = 250ma f = 175mhz pin = 6w pin = 3w typical performance SD2921-10 3/10
0 50 100 150 200 24.5 25 25.5 26 26.5 pout, output power (w) pg, power gain (db) f = 30 mhz vdd = 50 v idq = 250 ma sc13170 gate-source voltages vs case temperature -25 0 25 50 75 100 tc, case temperature (c) 0.85 0.9 0.95 1 1.05 1.1 vgs, gate-source voltage (normalize d vds = 10v id = 5a id = 4a id = 2a id = .25a id = 1a id = .1a output power vs gate voltage 0 50 100 150 200 vgs gate-source voltage (v) pout, output power (w) 0123456 vdd = 50 v idq = 250 ma f = 30 mhz fixed pin sc13210 tfl = -20c tfl = 25c tfl = 80c power gain vs output power output power vs input power 0 50 100 150 200 250 pin, input power (w) pout, output power(w) 0.02 0.1 0.18 0.26 0.34 0.42 0.5 0.58 0.66 vdd = 50 v sc13180 f = 30 mhz idq = 250 ma vdd = 40 v efficiency vs output power 0 50 100 150 200 0 20 40 60 pout, output power (w) efficiency(%) f= 30 mhz vdd = 50 v idq = 250 ma sc13190 output power vs voltage supply 0 50 100 150 200 vdd, supply voltage (v) pout, output power (w) 24 28 32 36 40 44 48 f = 30 mhz idq = 250 ma pin = 0.6w pin = 0.2w sc13200 pin = 0.4w typical performance SD2921-10 4/10
maximum thermal resistance vs case temperature 25 45 65 85 tc, case temperature (oc) 0.55 0.6 0.65 0.7 0.75 rth(j-c) (oc/w) dc safe operating area 12 51020 50100200 1 2 3 5 10 20 30 50 10 0 vds(v) ids(a) (1 ) (1) current in this area may be limited by rds(on) SD2921-10 5/10
30 mhz test circuit schematic (engineering test circuit) v + g +50v 30 mhz test circuit component part list t1 9:1 transformer, 25 ohm flexible coax with extra shield .090 od 15" long t2 1:4 transformer, 50 ohm flexible coax .225 od 15" long fb1 toroid, 1.7" od .30" id 220u 4 turns fb2 surface mount emi shield bead fb3 toroid, 1.7" od .300" id 220u 3 turns rfc1 toroid, 0.5" od 0.30" id, 125u 4 turns 12 awg wire pcb 0.062" woven fiberglass, 1 oz. copper, 2 sides, er = 2.55 c1, c4, c6, c7, c8, 0.01 uf atc chip cap c5 470 pf atc chip cap c9, c11, c12, c13 0.01 uf atc chip cap c10 10 uf 63v electrolytic capacitor c2, c3 750 pf atc chip cap c14 100 uf 63v electrolytic capacitor r1, r3 1k ohm 1w chip resistor r2 680 ohm 3w wirewound resistor SD2921-10 6/10
175 mhz test circuit schematic (production test circuit) v g +50v 175 mhz test circuit component part list t1 4:1 transformer, 25 ohm flexible coax .090 od 6 " long t2 1:4 transformer, 25 ohm semi-rigid coax .141 od 6 " long fb1 toroid x 2, 0.5" od .312" id 850u 2 turns fb2, fb3 vk200 fb4 shield bead, 1" od 0.5" id 850u 3 turns l1 ? wave choke, 50 ohm semi-rigid coax .141 od 12 " long pcb 0.062" woven fiberglass, 1 oz. copper, 2 sides, er = 2.55 r1, r3 470 ohm 1w chip resistor r4 20k ohm 10 turn potentiometer r2 360 ohm ?w resistor r5 560 ohm 1w resistor c1, c11 470 pf atc chip cap c7 30 pf atc chip cap c2 43 pf atc chip cap c10 91 pf atc chip cap c3, c8, c9 arco 404, 12-65 pf c12, c15 1200 pf atc chip cap c4 arco 423, 16-100 pf c13, c14 0.01 uf / 500v chip cap c5 120 pf atc chip cap c16, c17 0.01 uf / 500v chip cap c6 0.01 uf atc chip cap c18 10 uf 63v electrolytic capacitor note : all dimensions in inches ref. 1021579c SD2921-10 7/10
175 mhz test circuit photomaster 175 mhz test circuit SD2921-10 8/10
dim. mm inch min. typ. max. min. typ. max. a 5.56 5.84 0.219 0.230 b 3.18 0.125 c 6.22 6.48 0.245 0.255 d 18.28 18.54 0.720 0.730 e 3.18 0.125 f 24.64 24.89 0.970 0.980 g 12.57 12.83 0.495 0.505 h 0.08 0.18 0.003 0.007 i 2.11 3.00 0.083 0.118 j 3.81 4.45 0.150 0.175 k 7.11 0.280 l 25.53 26.67 1.005 1.050 m 3.05 3.30 0.120 0.130 1011000d m174 (.500 dia 4l n/herm w/flg) mechanical data controlling dimension in inches SD2921-10 9/10
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . SD2921-10 10/10
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